An advanced calibration method for modelling oxidation and mechanical stress in sub-micron CMOS isolation structures

Author

Jones, S.K. ; Poncet, A. ; De Wolf, I. ; Ahmed, M.M. ; Rothwell, W.J.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

877

Lastpage

880

Abstract

A new approach is to provide accurate simulation of both oxidation topography and mechanical stress in LOCOS-derived isolation structures forecast for 0.25 /spl mu/m CMOS is presented. Advanced modelling and characterisation have been used to calibrate 2D oxidation and stress analysis models with account of the measurement instrumental response function. A revision to the mechanical properties of thin nitride and oxide layers is proposed to explain the results.<>

Keywords

CMOS integrated circuits; calibration; integrated circuit measurement; integrated circuit technology; internal stresses; isolation technology; oxidation; 0.25 micron; 2D oxidation; LOCOS-derived isolation; advanced calibration method; measurement instrumental response function; mechanical stress; oxidation; oxidation topography; stress analysis models; sub-micron CMOS isolation structures; CMOS technology; Calibration; Instruments; Oxidation; Semiconductor device modeling; Silicon; Spatial resolution; Stress measurement; Surfaces; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383273

Filename

383273