A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions

Author

Baccus, B. ; Vandenbossche, E.

Author_Institution

IEMN-ISEN, Lille, France

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

869

Lastpage

872

Abstract

A model has been developed for boron diffusion after ion implantation and validated for a very wide range of doses and temperatures. For the first time, it allows the continuous simulation of the transition between amorphizing and non-amorphizing conditions. Transient-enhanced diffusion (TED) and activation are modeled by taking into account the implant damage and precipitation kinetics. It is shown that the initial level of activation is one of the most important parameters in such an analysis.<>

Keywords

BiCMOS integrated circuits; annealing; boron; diffusion; elemental semiconductors; ion implantation; precipitation; semiconductor process modelling; silicon; Si:B; amorphizing conditions; boron diffusion; dose ranges; dose temperatures; implant damage; nonamorphizing conditions; post-implant annealing; precipitation kinetics; transient-enhanced diffusion; Annealing; Bismuth; Boron; Electric variables measurement; Furnaces; Implants; Ion implantation; Kinetic theory; Semiconductor process modeling; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383275

Filename

383275