Title :
Device implications of enhanced diffusion caused by the electrical deactivation of arsenic
Author :
Rousseau, P.M. ; Griffin, P.B. ; Kuehne, S.C. ; Plummer, J.D.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
In this paper, we present experiments designed to show that electrical deactivation of arsenic enhances the diffusion of dopants for implanted arsenic or arsenic in-diffused from polysilicon. Results show a clear enhancement of diffusion in a nearby boron layer as well as an enhancement for the arsenic itself. Simulations and device measurements reveal this can have a considerable effect on the electrical characteristics of bipolar transistors.<>
Keywords :
annealing; arsenic; bipolar transistors; diffusion; elemental semiconductors; ion implantation; semiconductor doping; silicon; B layer; Si:As; Si:B; bipolar transistors; dopants; electrical characteristics; electrical deactivation; enhanced diffusion; polysilicon; Annealing; Atomic beams; Atomic layer deposition; Bipolar transistors; Boron; Electric variables; Electric variables measurement; Implants; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383277
