DocumentCode
2524791
Title
Device implications of enhanced diffusion caused by the electrical deactivation of arsenic
Author
Rousseau, P.M. ; Griffin, P.B. ; Kuehne, S.C. ; Plummer, J.D.
Author_Institution
Stanford Univ., CA, USA
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
861
Lastpage
864
Abstract
In this paper, we present experiments designed to show that electrical deactivation of arsenic enhances the diffusion of dopants for implanted arsenic or arsenic in-diffused from polysilicon. Results show a clear enhancement of diffusion in a nearby boron layer as well as an enhancement for the arsenic itself. Simulations and device measurements reveal this can have a considerable effect on the electrical characteristics of bipolar transistors.<>
Keywords
annealing; arsenic; bipolar transistors; diffusion; elemental semiconductors; ion implantation; semiconductor doping; silicon; B layer; Si:As; Si:B; bipolar transistors; dopants; electrical characteristics; electrical deactivation; enhanced diffusion; polysilicon; Annealing; Atomic beams; Atomic layer deposition; Bipolar transistors; Boron; Electric variables; Electric variables measurement; Implants; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383277
Filename
383277
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