DocumentCode
2524795
Title
Ku-band AlGaN/GaN HEMT with over 30W
Author
Takagi, Kazutaka ; Kashiwabara, Yasushi ; Masuda, Kazutoshi ; Matsushita, Keiichi ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution
Toshiba Corp., Kawasaki
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
169
Lastpage
172
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; AlGaN-GaN; HEMT; Ku-band applications; frequency 12 GHz to 18 GHz; high electron mobility transistors; microwave power devices; power added efficiency; size 12 mm; voltage 30 V; Aluminum gallium nitride; Fabrication; Frequency; Gallium nitride; HEMTs; Microwave devices; Packaging; Power generation; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412675
Filename
4412675
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