A study on the fabrication and characterization of alumina electrostatic chuck for silicon wafer processing

Author

Jeong, K.J. ; Spoutai, S. ; Choi, S.H. ; Cho, T.Y. ; Chun, H.-G.

Author_Institution

Sch. of Mater. Sci. & Metall. Eng., Ulsan Univ., South Korea

Volume

2

fYear

1999

fDate

1999

Firstpage

532

Abstract

Alumina electrostatic chucks for silicon wafer processing with wide range of electrical resistivity were fabricated by controlling the content of TiO₂ in alumina (0 wt%, 1.3 wt%, 2 wt%, and 2.8 wt%). The dependence of electrostatic force on applied voltage, temperature and humidity was investigated. In addition, response characteristics on applied voltage and relationship between electrical resistivity and electrostatic force characteristics such as Coulomb force and Johnsen-Rahbeck force were discussed

Keywords

alumina; electrical resistivity; electroplating; electrostatic devices; sample holders; semiconductor technology; Al₂O₃; Al₂O₃-TiO₂; Coulomb force; Johnsen-Rahbeck force; alumina electrostatic chuck; applied voltage dependence; electrostatic force; fabrication; humidity dependence; response characteristics; response time; silicon wafer processing; temperature dependence; titania content control; wafer holder; wide electrical resistivity range; Clamps; Conductivity; Delay; Electric resistance; Electrostatics; Fabrication; Humidity; Materials science and technology; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on

Conference_Location

Novosibirsk

Print_ISBN

0-7803-5729-9

Type

conf

DOI

10.1109/KORUS.1999.876219

Filename

876219