A 361nA thermal run-away immune VBB generator using dynamic substrate controlled charge pump for ultra low sleep current logic on 65nm SOTB

This paper proposed an on-chip low power Body Bias Generator (VBBGEN) for ultra low leakage at 65nm SOTB (Silicon on Thin Buried Oxide) logic circuits at sleep mode. In the results of post layout simulation, the VBBGEN can generate and apply up to -2V body bias at a supply voltage of 0.5V with a current consumption of less than 361nA. By using the VBBGEN, it is expected that sleep current of CPU on SOTB is decreased by more than two orders of magnitude. In addition, the VBBGEN also has a function that prevents thermal run away of SOTB logic circuits.