A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application

Author

Mitani, E. ; Aojima, M. ; Sano, S.

Author_Institution

Eudyna Devices Inc., Yamanashi

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

176

Lastpage

179

Abstract

We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.

Keywords

III-V semiconductors; UHF amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; microwave amplifiers; wide band gap semiconductors; AlGaN; HEMT Pallet amplifier; drain voltage; gain 13.6 dB; high power application; voltage 65 V; Aluminum gallium nitride; Copper; Gain; Gallium nitride; HEMTs; High power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412677

Filename

4412677