• DocumentCode
    252488
  • Title

    Dielectric isolated FinFETs on bulk substrate

  • Author

    Lu, D. ; Kangguo Cheng ; Morin, P. ; Loubet, N. ; Hook, T. ; Dechao Guo ; Khakifirooz, A. ; Oldiges, P. ; Doris, B. ; Ken Rim ; Jacob, A. ; Huiming Bu ; Khare, M.

  • Author_Institution
    IBM Res., Albany, NY, USA
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Dielectric Isolated (DI) FinFETs exhibit superior electrostatic control compared to bulk FinFET without needing heavy sub-fin punchthrough stop doping, which increases device variability. Bottom oxidation through STI (BOTS) [1] and silicon-on-nothing (SON) are viable techniques to fabricate DI FinFETs on inexpensive bulk substates, as alternative to SOI substrate. In this paper we analyze DI FinFETs in terms of mechanical stress, transport, electrostatics and parasitic capacitances.
  • Keywords
    MOSFET; capacitance; electrostatics; oxidation; silicon-on-insulator; thermal stresses; SOI substrate; bottom oxidation through STI; bulk substrate; dielectric isolated FinFETs; electrostatics; mechanical stress; parasitic capacitances; silicon-on-nothing FinFET process; transport properties; Dielectrics; FinFETs; Logic gates; Oxidation; Silicon; Stress; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
  • Conference_Location
    Millbrae, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2014.7028188
  • Filename
    7028188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252488