Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization

Author

Allibert, F. ; Morin, P. ; He, H. ; Li, J. ; Schwarzenbach, W. ; Loubet, N. ; Khakifirooz, A. ; DeSalvo, B. ; Doris, B.

Author_Institution

Parc Technol. des Fontaines, Soitec, Bernin, France

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Elastic relaxation after Fin formation in intrinsically-strained materials was presented. Reported simulations are correlated with NBD strain measurements and are consistent with length dependence of drain current in sSOI FinFETs. Stress in the Fin´s channel region depends on Fin length and height. dingle layer structured Fins are much more resistant to elastic relaxation than dual layer structured Fins, due to overall structure height. On dual layer structure Fins, significant relaxation is expected for LFin shorter than 750nm, while single layer structured Fins do not relax significantly until 300nm. For transistor layout, elastic relaxation effects should be modeled or circumvented. Fin Length effects need to be added to other layout effects in Spice models.

Keywords

MOSFET; silicon; silicon-on-insulator; stress relaxation; 3D structure; NBD; Si; channel strain engineering; elastic relaxation; electrical characterization; external stressing element; field effect transistor; fin geometry; finFET; intrinsically strained channel material; intrinsically-strained fin; mobility booster; nanobeam diffraction; pitch-independent; planar structure; sSOI; strained-silicon on insulator; FinFETs; Mathematical model; Periodic structures; Strain; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028189

Filename

7028189