Title :
De-embedding and modelling of pnp SiGe HBTs
Author :
Hadziabdic, D. ; Jiang, C. ; Johansen, T.K. ; Fischer, G.G. ; Heinemann, B. ; Krozer, V.
Author_Institution :
Tech. Univ. of Denmark, Lyngby
Abstract :
In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fT.
Keywords :
heterojunction bipolar transistors; silicon compounds; SiGe; interconnect lines; multi-bias small-signal model extraction; open-short deembedding technique; parameter extraction procedure; pnp heterojunction bipolar transistor; Admittance; BiCMOS integrated circuits; Circuit testing; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Integrated circuit modeling; Parameter extraction; Silicon germanium;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412682
