Quantum mechanical modeling of the charge distribution Si/Si/sub 1-x/Ge/sub x/Si p-channel MOSFET

Author

Hargrove, M.J. ; Henning, A.K. ; Slinkman, J.A. ; Bean, J.C.

Author_Institution

Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

735

Lastpage

738

Abstract

Incorporation of a Si/sub 1-x/Ge/sub x/ alloy layer in the channel of a p-channel MOSFET has been proposed as a means to improve device performance. In order to achieve optimal performance in such a device, the inversion charge distribution must be located in the alloy channel layer where the carrier mobility is highest. The smaller bandgap of the Si/sub 1-x/Ge/sub x/ alloy layer, compared to Si, creates a potential well in which the carriers can reside. Understanding how the carriers distribute themselves under various gate bias conditions is necessary in order to achieve optimal device design. The authors´ aim is to demonstrate the dependence of the charge distribution in a Si/Si/sub 1-x/Ge/Si p-channel MOSFET based on the self-consistent solution of the Schrodinger-Poisson equations.<>

Keywords

Ge-Si alloys; MOSFET; Schrodinger equation; carrier mobility; elemental semiconductors; inversion layers; semiconductor device models; semiconductor materials; silicon; Schrodinger-Poisson equations; Si-SiGe-Si; Si/sub 1-x/Ge/sub x/ alloy layer; alloy channel layer; bandgap; carrier mobility; gate bias conditions; inversion charge distribution; optimal performance; p-channel MOSFET; potential well; quantum mechanical modeling; Carrier confinement; Educational institutions; Germanium alloys; Germanium silicon alloys; MOSFET circuits; Microelectronics; Photonic band gap; Quantum mechanics; Silicon alloys; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383284

Filename

383284