Title :
Anisotropic electron-phonon interaction in silicon inversion layers in magnetic field
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In any 2D electron system with asymmetrical quantizing potential in the presence of a magnetic field parallel to the 2D plane the macroscopic quantum effect appears: due to anisotropic electron-phonon interaction in these systems an emf emerges for homogeneous heating of the electrons. This phenomenon is analyzed in this paper for 2D electron system in n-inversion layers on (001)-surface of silicon
Keywords :
electron-phonon interactions; elemental semiconductors; inversion layers; magnetic field effects; silicon; two-dimensional electron gas; 2D electron system; Si; anisotropic electron-phonon interaction; asymmetrical quantizing potential; homogeneous heating; inversion layers; macroscopic quantum effect; magnetic field; Acoustic propagation; Acoustic waves; Anisotropic magnetoresistance; Charge carrier processes; Electron emission; Heating; Magnetic fields; Phonons; Silicon; Temperature;
Conference_Titel :
Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5729-9
DOI :
10.1109/KORUS.1999.876229
