Optimal microwave properties of thin BSTO films for high frequency applications

Author

Tumarkin, A.V. ; Razumov, S.V. ; Gagarin, A.G. ; Kozyrev, A.B.

Author_Institution

Dept. of Electron Ion & Vacuum Technol., St. Petersburg Elecrotech. Univ., Russia

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1315

Abstract

The influence of deposition parameters on microwave properties of Ba_xSr_1-xTiO₃ (BSTO) films deposited on alumina substrate has been investigated in a wide frequency range (1-30 GHz). The best combination of high tunability (n) and low losses (tan δ) at room temperature was obtained for the 30% Ba content target. The best BSTO films exhibited n=2.1 and tan δ=0.016 at 1 GHz and zero bias. This result is among the best reported for sputtered BSTO on alumina substrates.

Keywords

barium compounds; ceramic capacitors; dielectric losses; ferroelectric capacitors; ferroelectric ceramics; ferroelectric thin films; microwave devices; microwave materials; sputtered coatings; strontium compounds; 1 to 30 GHz; 293 to 298 K; Al₂O₃; Ba_xSr_1-xTiO₃; Ba_xSr_1-xTiO₃ films; alumina substrate; deposition parameters; high frequency applications; microwave properties; room temperature; tunability; Barium; Capacitors; Ceramics; Dielectric losses; Dielectric thin films; Microwave devices; Radio frequency; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262900

Filename

1262900