DocumentCode :
2525020
Title :
Optimal microwave properties of thin BSTO films for high frequency applications
Author :
Tumarkin, A.V. ; Razumov, S.V. ; Gagarin, A.G. ; Kozyrev, A.B.
Author_Institution :
Dept. of Electron Ion & Vacuum Technol., St. Petersburg Elecrotech. Univ., Russia
Volume :
3
fYear :
2003
fDate :
7-9 Oct. 2003
Firstpage :
1315
Abstract :
The influence of deposition parameters on microwave properties of BaxSr1-xTiO3 (BSTO) films deposited on alumina substrate has been investigated in a wide frequency range (1-30 GHz). The best combination of high tunability (n) and low losses (tan δ) at room temperature was obtained for the 30% Ba content target. The best BSTO films exhibited n=2.1 and tan δ=0.016 at 1 GHz and zero bias. This result is among the best reported for sputtered BSTO on alumina substrates.
Keywords :
barium compounds; ceramic capacitors; dielectric losses; ferroelectric capacitors; ferroelectric ceramics; ferroelectric thin films; microwave devices; microwave materials; sputtered coatings; strontium compounds; 1 to 30 GHz; 293 to 298 K; Al2O3; BaxSr1-xTiO3; BaxSr1-xTiO3 films; alumina substrate; deposition parameters; high frequency applications; microwave properties; room temperature; tunability; Barium; Capacitors; Ceramics; Dielectric losses; Dielectric thin films; Microwave devices; Radio frequency; Sputtering; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMC.2003.1262900
Filename :
1262900
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2525020
بازگشت