Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

Author

Hovenier, J.N. ; Klaassen, T.O. ; Zhukavin, R.K. ; Gaponova, D.M. ; Muravjov, A.V. ; Orlova, E.E. ; Shastin, V.N. ; Pavlov, S.G. ; Hubers, Heinz-Wilhelm ; Riemann, H. ; van der Meer, A.F.G.

Author_Institution

Delft Univ. of Technol., Netherlands

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

271

Lastpage

272

Abstract

Frequency tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature under resonant pumping of odd parity impurity states.

Keywords

bismuth; elemental semiconductors; impurity states; optical pumping; phosphorus; semiconductor lasers; silicon; stimulated emission; 4.2 K; Si:Bi; Si:P; bulk monocrystalline silicon; frequency tunable radiation; lasing; neutral bismuth donors; neutral phosphorus donors; odd parity impurity states; resonant intracenter optical pumping; resonant pumping; stimulated emission; terahertz frequencies; Bismuth; Free electron lasers; Frequency; Helium; Laser excitation; Optical pumping; Pump lasers; Resonance; Silicon; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076189

Filename

1076189