Pressure dependence of electron tunneling transmission in GaAs/AlAs multiple barrier heterostructures

Author

Dragunov, V.P. ; Shishkov, A.A.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

2

fYear

1999

fDate

1999

Firstpage

576

Abstract

We propose a set of boundary conditions for electron enveloping wave functions at GaAs/AlAs (100) heterointerfaces, taking into account not only Γ-χ mixing, but also interaction χ1-χ3 of bands of AlAs in effective masses approach. The proposed conditions have allowed dependences of the mixing effect upon the parity of monolayer number in AlAs barriers to be obtained and applied stress. The calculations have shown, that the pressure results in a significant displacement of χ-resonances and increase of splitting magnitude of twin χ-peaks which is caused by interaction with Γ-peak. The movement of a Γ1 resonance is stipulated by dependence of effective masses of Γ-valley on strain

Keywords

III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; interface states; resonant tunnelling; semiconductor heterojunctions; wave functions; Γ-X mixing; Γ-peak; Γ1 resonance; GaAs-AlAs; III-V semiconductors; X-resonances; effective masses approach; electron enveloping wave functions; electron tunneling transmission; monolayer number; multiple barrier heterostructures; splitting magnitude; twin X-peaks; Boundary conditions; Capacitive sensors; Effective mass; Electrons; Equations; Gallium arsenide; Resonance; Stress; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on

Conference_Location

Novosibirsk

Print_ISBN

0-7803-5729-9

Type

conf

DOI

10.1109/KORUS.1999.876231

Filename

876231