Title :
ESD structures impact analysis on a WLAN 802.11a LNA
Author :
Jato, Yolanda ; Herrera, Amparo
Author_Institution :
Univ. of Cantabria, Santander
Abstract :
This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.
Keywords :
BiCMOS integrated circuits; MMIC; electrostatic discharge; low noise amplifiers; wireless LAN; BiCMOS technology; ESD structures impact analysis; IEEE 802.11a-HiperLAN WLAN standard; LNA; MMIC electrostatic discharge protection circuit; SiGe:C; frequency 5.2 GHz; low noise amplifier; monolithic microwave integrated circuits; wireless local area network; BiCMOS integrated circuits; Broadband amplifiers; Electrostatic discharge; Gain measurement; Low-noise amplifiers; MMICs; Noise measurement; Protection; Pulp manufacturing; Wireless LAN;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412686
