ESD structures impact analysis on a WLAN 802.11a LNA

Author

Jato, Yolanda ; Herrera, Amparo

Author_Institution

Univ. of Cantabria, Santander

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

211

Lastpage

214

Abstract

This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.

Keywords

BiCMOS integrated circuits; MMIC; electrostatic discharge; low noise amplifiers; wireless LAN; BiCMOS technology; ESD structures impact analysis; IEEE 802.11a-HiperLAN WLAN standard; LNA; MMIC electrostatic discharge protection circuit; SiGe:C; frequency 5.2 GHz; low noise amplifier; monolithic microwave integrated circuits; wireless local area network; BiCMOS integrated circuits; Broadband amplifiers; Electrostatic discharge; Gain measurement; Low-noise amplifiers; MMICs; Noise measurement; Protection; Pulp manufacturing; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412686

Filename

4412686