Voltage controlled spectral response in n-SnO/sub 2//a-SiC/metal photodetector

Author

Rossi, M.C. ; Vincenzoni, N. ; Galluzzi, F.

Author_Institution

Dipartimento di Ingegneria Elettronica, Rome Univ., Italy

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

721

Lastpage

724

Abstract

The authors discuss the realisation of n-SnO/sub 2//a-SiC/Al photodiodes with voltage-controlled spectral responses. The response peak is located at 480, 510 and 570 nm when the applied voltage is -4, 0 and +4 Volts, respectively, while the corresponding quantum yield values are 17%, 3% and 25%. a-SiC photoconductivity, light-induced modulation of n/sup +/-SnO/sub 2//a-SiC barrier height and primary photocurrent generation by interfacial recombination phenomena suggest a simple model to explain the observed behaviour.<>

Keywords

aluminium; amorphous semiconductors; interface states; photoconductivity; photodetectors; photodiodes; semiconductor heterojunctions; semiconductor materials; semiconductor-metal boundaries; silicon compounds; tin compounds; -4 to 4 V; 480 to 570 nm; SnO/sub 2/-SiC-Al; a-SiC photoconductivity; barrier height; interfacial recombination phenomena; light-induced modulation; model; n-SnO/sub 2//a-SiC/metal photodetector; photodiodes; primary photocurrent generation; quantum yield values; voltage-controlled spectral responses; Charge carrier processes; Equivalent circuits; Lighting; Optical films; Photoconductivity; Photodetectors; Photodiodes; Radiative recombination; Schottky diodes; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383287

Filename

383287