Novel ultra low voltage semi floating-gate passband transconductance amplifier

Author

Berg, Y.

Author_Institution

Dept. of Inf., Univ. of Oslo, Oslo, Norway

fYear

2010

fDate

26-28 April 2010

Firstpage

286

Lastpage

289

Abstract

An ultra low voltage differential transconductance amplifier based on clocked binary and analog inverters is presented. Supply voltages down to 250mV can be applied. Clocked semi-floating-gate binary inverters used for ultra low voltage digital logic are exploted to obtain analog inverting gates. The ultra low voltage amplifier perform a passband operation where the passband is dependent on the applied current level. The gates used resemble precharge CMOS logic where the current level is determined by offset voltages and the precharge level is determined by the supply voltage provided by the clock signals applied. Simulated data presented are valid for a 90nm STM CMOS process.

Keywords

CMOS logic circuits; amplifiers; analogue circuits; band-pass filters; clocks; logic gates; low-power electronics; CMOS logic; analog inverting gates; clock signal; clocked binary inverter; offset voltage; precharge level; size 90 nm; supply voltage; ultra low voltage differential transconductance amplifier; ultra low voltage digital logic; ultra low voltage semi floating-gate passband transconductance amplifier; Analog circuits; CMOS logic circuits; CMOS technology; Clocks; Differential amplifiers; Inverters; Low voltage; Passband; Transconductance; Variable structure systems;

fLanguage

English

Publisher

ieee

Conference_Titel

MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference

Conference_Location

Valletta

Print_ISBN

978-1-4244-5793-9

Type

conf

DOI

10.1109/MELCON.2010.5476281

Filename

5476281