A flattened-pear shaped photodiode structure for low smear and high sensitivity CCD image sensors

Author

Furumiya, M. ; Kawakami, Y. ; Murakami, I. ; Morimoto, M. ; Mutoh, N. ; Orihara, K. ; Hatano, K. ; Suwazono, S. ; Arai, K. ; Teranishi, N. ; Hokari, Y.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

713

Lastpage

716

Abstract

A new, flattened-pear shaped photodiode structure has been developed to reduce smear and to increase photo-sensitivity in CCD image sensors. The new structure features a wide, low-concentration N- layer formed below the conventional photodiode N layer. The new photodiode was designed by using a new parameter deduced from simulated potential-profiles to help optimize the Nlayer conditions. The new structure was applied to a 2/3-inch 2M pixel interline-transfer CCD (IT-CCD) image sensor, and it has achieved a low smear (-85 dB) as well as high sensitivity (35 nA/1x).<>

Keywords

CCD image sensors; photodiodes; sensitivity; CCD image sensors; flattened-pear shaped photodiode structure; high sensitivity; low smear; low-concentration; simulated potential-profiles; Charge coupled devices; Charge-coupled image sensors; Design optimization; Image sensors; Microelectronics; National electric code; Photodiodes; Pixel; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383293

Filename

383293