Title :
A flattened-pear shaped photodiode structure for low smear and high sensitivity CCD image sensors
Author :
Furumiya, M. ; Kawakami, Y. ; Murakami, I. ; Morimoto, M. ; Mutoh, N. ; Orihara, K. ; Hatano, K. ; Suwazono, S. ; Arai, K. ; Teranishi, N. ; Hokari, Y.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
A new, flattened-pear shaped photodiode structure has been developed to reduce smear and to increase photo-sensitivity in CCD image sensors. The new structure features a wide, low-concentration N- layer formed below the conventional photodiode N layer. The new photodiode was designed by using a new parameter deduced from simulated potential-profiles to help optimize the Nlayer conditions. The new structure was applied to a 2/3-inch 2M pixel interline-transfer CCD (IT-CCD) image sensor, and it has achieved a low smear (-85 dB) as well as high sensitivity (35 nA/1x).<>
Keywords :
CCD image sensors; photodiodes; sensitivity; CCD image sensors; flattened-pear shaped photodiode structure; high sensitivity; low smear; low-concentration; simulated potential-profiles; Charge coupled devices; Charge-coupled image sensors; Design optimization; Image sensors; Microelectronics; National electric code; Photodiodes; Pixel; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383293
