Highly compact 3.1 -10.6 GHz UWB LNA in SiGe HBT technology

Author

Dederer, J. ; Chartier, S. ; Feger, T. ; Spitzberg, U. ; Trasser, A. ; Schumacher, H.

Author_Institution

Ulm Univ., Ulm

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

247

Lastpage

250

Abstract

We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. AH performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm².

Keywords

feedback; heterojunction bipolar transistors; low noise amplifiers; wideband amplifiers; HBT technology; SiGe; broadband noise; cascode topology; diode DC level shifter; frequency 3.1 GHz to 10.6 GHz; heterojunction bipolar technology; highly compact UWB LNA; low noise amplifier; power matching; resistive shunt feedback; ultra-wideband systems; Bandwidth; Circuit noise; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412695

Filename

4412695