Title :
Highly compact 3.1 -10.6 GHz UWB LNA in SiGe HBT technology
Author :
Dederer, J. ; Chartier, S. ; Feger, T. ; Spitzberg, U. ; Trasser, A. ; Schumacher, H.
Author_Institution :
Ulm Univ., Ulm
Abstract :
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. AH performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm2.
Keywords :
feedback; heterojunction bipolar transistors; low noise amplifiers; wideband amplifiers; HBT technology; SiGe; broadband noise; cascode topology; diode DC level shifter; frequency 3.1 GHz to 10.6 GHz; heterojunction bipolar technology; highly compact UWB LNA; low noise amplifier; power matching; resistive shunt feedback; ultra-wideband systems; Bandwidth; Circuit noise; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412695
