Fabrication of the InP nanopillars

Author

Weng, Zhankun ; Liu, Lanjiao ; Xu, Jia ; Song, Zhengxun ; Wang, Zuobin

Author_Institution

Centre for Nano Metrol. & Manuf. Technol., Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2010

fDate

10-12 Sept. 2010

Firstpage

569

Lastpage

573

Abstract

This paper presents a way to fabricate nanopillars of InP, which is obtained based on the nanosphere mask by electrochemical etching. The nanopillars are cylinder-shaped, and the smallest feature size can be ~5nm. The results have shown that the formation of the nanopillars is devoted to the areas of the tangency between the nanospheres and the wafer. The blue shift peak of photoluminescence spectra was observed in room temperature, and it was approximately 21meV and attributed to the quantum confinement effect.

Keywords

III-V semiconductors; etching; indium compounds; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; InP; blue shift peak; electrochemical etching; nanopillars fabrication; nanospheres; photoluminescence spectra; quantum confinement effect; size 5 nm; temperature 293 K to 298 K; wafer; Biophotonics; Chemicals; Compounds; Educational institutions; Nanoscale devices; Electrochemical etching; InP; Nanopillars; Photoluminescence spectra;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-8100-2

Electronic_ISBN

978-1-4244-8102-6

Type

conf

DOI

10.1109/ICMET.2010.5598423

Filename

5598423