Title :
Fabrication of the InP nanopillars
Author :
Weng, Zhankun ; Liu, Lanjiao ; Xu, Jia ; Song, Zhengxun ; Wang, Zuobin
Author_Institution :
Centre for Nano Metrol. & Manuf. Technol., Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
This paper presents a way to fabricate nanopillars of InP, which is obtained based on the nanosphere mask by electrochemical etching. The nanopillars are cylinder-shaped, and the smallest feature size can be ~5nm. The results have shown that the formation of the nanopillars is devoted to the areas of the tangency between the nanospheres and the wafer. The blue shift peak of photoluminescence spectra was observed in room temperature, and it was approximately 21meV and attributed to the quantum confinement effect.
Keywords :
III-V semiconductors; etching; indium compounds; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; InP; blue shift peak; electrochemical etching; nanopillars fabrication; nanospheres; photoluminescence spectra; quantum confinement effect; size 5 nm; temperature 293 K to 298 K; wafer; Biophotonics; Chemicals; Compounds; Educational institutions; Nanoscale devices; Electrochemical etching; InP; Nanopillars; Photoluminescence spectra;
Conference_Titel :
Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8100-2
Electronic_ISBN :
978-1-4244-8102-6
DOI :
10.1109/ICMET.2010.5598423
