Title :
Recent advances in SOI technology
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
Abstract :
The flexibility provided by full dielectric isolation and the quasi-ideal properties of the SOI MOSFET (sharp subthreshold slope, low body-effect coefficient, ...) have given rise to new fields of applications for SOI devices. Beside high-temperature and radiation hard niche applications, SOI technology is now increasingly used for the fabrication of low-voltage, low-power CMOS circuits, high-frequency (microwave) devices, and power devices. Some novel SOI devices have been recently reported as well.<>
Keywords :
CMOS integrated circuits; radiation effects; radiation hardening (electronics); silicon-on-insulator; SOI MOSFET; SOI devices; SOI technology; full dielectric isolation; high-frequency microwave devices; low body-effect coefficient; low-power CMOS circuits; low-voltage; power devices; quasi-ideal properties; radiation hard niche applications; sharp subthreshold slope; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Dielectric substrates; Fabrication; Immune system; Isolation technology; MOSFET circuits; Silicon; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383299
