32 nm FinFET-based 0.7-to-1.1 V digital voltage sensor with 50 mV resolution

Author

Nguyen, Hung Viet ; Kim, Youngmin

Author_Institution

Sch. of Electr. & Comput. Eng., UNIST, Ulsan, South Korea

fYear

2012

fDate

May 30 2012-June 1 2012

Firstpage

1

Lastpage

4

Abstract

FinFET devices with superior ability in controlling leakage and minimizing short channel effects are anticipated to replace CMOS devices in the near future. This paper presents a design of voltage sensor in 32 nm FinFET. Based on the operation of a p-type FinFET in low-power mode and independent-gate mode, a new technique for designing a controllable delay element (CDE) with high linearity is presented. Then, we develop a 9-bit digital voltage sensor with a voltage range of 0.7 - 1.1 V and 50 mV resolution. The proposed voltage sensor can operate with ultra-low power, a wide voltage range, and fairly high frequency (i.e., 100 MHz).

Keywords

CMOS integrated circuits; MOSFET; digital voltmeters; integrated circuit design; low-power electronics; CMOS device; controllable delay element design; digital voltage sensor; independent-gate mode; leakage control; low-power mode; p-type FinFET; short channel effect minimization; size 32 nm; voltage 0.7 V to 1.1 V; voltage 50 mV; word length 9 bit; CMOS integrated circuits; Clocks; Delay; FinFETs; Logic gates; Voltage control; Voltage measurement; ADC; FinFET; circuit design; low power; voltage sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2012 IEEE International Conference on

Conference_Location

Austin, TX

ISSN

pending

Print_ISBN

978-1-4673-0146-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/ICICDT.2012.6232846

Filename

6232846