High efficiency distributed amplifier using optimum transmission line

Author

Jeong, Sigyun ; Choi, Heungjae ; Jeong, Yongchae ; Kenney, J. Stevenson ; Kim, Chuldong

Author_Institution

Chonbuk Nat. Univ., Jeonju

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

287

Lastpage

290

Abstract

In this paper, we performed numerical analysis on reversed current of distributed amplifier (DA) based on transmission line theory and proposed optimum transmission line (OTL) to cancel reversed currents. This OTL has improved electrical performances of DA. The distributed amplifier using optimum transmission line (DAOTL) has been implemented with pHEMT transistor. Due to high capacitance of pHEMT, cutoff frequency is decided to 3.6 GHz. As a result of measurement, we could obtain maximum gain of 14.5 dB and minimum gain of 12.8 dB inner operation band. Moreover, we could PAE of 25.6% which is higher about 7.6% than the conventional DA (CDA) at 3GHz. The output power was obtained 10.9 dBm which is higher about 1.7 dB than the conventional at 3GHz.

Keywords

HEMT circuits; distributed amplifiers; high electron mobility transistors; microwave amplifiers; transmission lines; distributed amplifier; frequency 3 GHz; frequency 3.6 GHz; high efficiency distributed amplifier; optimum transmission line; pHEMT transistor; transmission line theory; Capacitance; Cutoff frequency; Distributed amplifiers; Gain; Numerical analysis; PHEMTs; Power transmission lines; Transmission line measurements; Transmission line theory; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412705

Filename

4412705