DocumentCode
252543
Title
UTBB/FDSOI: Reasons for a success
Author
Haond, M.
Author_Institution
STMicroelectron., Crolles, France
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1
Lastpage
2
Abstract
We have presented the reasons of a success story for the 2D FDSOI Technology that has started at 28 nm and will continue through the 10 nm node. Competitive performance and power control is demonstrated. It is also experiencing the use of Back Biasing both for performance boost as well as for adequate Process compensation allowing reaching a tighter process control that has become key for these advanced nodes.
Keywords
CMOS integrated circuits; silicon-on-insulator; 2D process legacy; CMOS; FDSOI technology; UTBB; performance boost; power control; CMOS integrated circuits; MOS devices; Performance evaluation; Process control; Silicon; Three-dimensional displays; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location
Millbrae, CA
Type
conf
DOI
10.1109/S3S.2014.7028212
Filename
7028212
Link To Document