Title :
Piezoresistivity in unstrained and strained SOI MOSFETs
Author :
Berthelon, R. ; Casse, M. ; Rideau, D. ; Nier, O. ; Andrieu, F. ; Vincent, E. ; Reimbold, G.
Author_Institution :
Leti, CEA, Grenoble, France
Abstract :
We hereby present the extraction and the study of piezoresistive (PR) coefficients in MOSFETs built on unstrained and strained SOI substrates. We have evidenced a strong dependence of these PR with the inversion charge density in particular for PMOS. These results are well explained by the Si bandstructure calculation which enlightens the effect of the strain and of the electric confinement on carrier mobility, up to high tensile strain values.
Keywords :
MOSFET; piezoresistance; piezoresistive devices; silicon; silicon-on-insulator; substrates; PMOS; PR coefficient; SOI substrate; Si; bandstructure calculation; carrier mobility; electric confinement; inversion charge density; piezoresistivity; strained silicon on insulator metal oxide semiconductor field effect transistor; tensile strain value; unstrained SOI MOSFET; MOS devices; Piezoresistance; Silicon; Stress; Substrates; Tensile strain;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028213
