• DocumentCode
    2525443
  • Title

    Evaluation of non-destructive etch depth measurement for through silicon vias

  • Author

    Dao, Thuy ; Thomas, Tania ; Marx, David ; Grant, David

  • Author_Institution
    Freescale Semicond., Austin, TX, USA
  • fYear
    2012
  • fDate
    May 30 2012-June 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Through-Silicon-Via depth inline monitoring is one of the key requirements for implementing TSV technology into high volume production. The Tamar tool using IR from the backside of wafer is demonstrated to have the capability to provide non-destructive inline monitoring of trench depth after plasma etch, even when the backside wafer surface is rough. However, the etch profile is found to be critical to the effectiveness of this tool. A flat TSV bottom with a minimum of at least 1um in width is required for accurate and repeatable measurements.
  • Keywords
    etching; three-dimensional integrated circuits; TSV technology; Tamar tool; depth inline monitoring; nondestructive etch depth measurement; through silicon vias; Optical interferometry; Optical variables measurement; Rough surfaces; Scanning electron microscopy; Silicon; Thickness measurement; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design & Technology (ICICDT), 2012 IEEE International Conference on
  • Conference_Location
    Austin, TX
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0146-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/ICICDT.2012.6232854
  • Filename
    6232854