DocumentCode
2525443
Title
Evaluation of non-destructive etch depth measurement for through silicon vias
Author
Dao, Thuy ; Thomas, Tania ; Marx, David ; Grant, David
Author_Institution
Freescale Semicond., Austin, TX, USA
fYear
2012
fDate
May 30 2012-June 1 2012
Firstpage
1
Lastpage
4
Abstract
Through-Silicon-Via depth inline monitoring is one of the key requirements for implementing TSV technology into high volume production. The Tamar tool using IR from the backside of wafer is demonstrated to have the capability to provide non-destructive inline monitoring of trench depth after plasma etch, even when the backside wafer surface is rough. However, the etch profile is found to be critical to the effectiveness of this tool. A flat TSV bottom with a minimum of at least 1um in width is required for accurate and repeatable measurements.
Keywords
etching; three-dimensional integrated circuits; TSV technology; Tamar tool; depth inline monitoring; nondestructive etch depth measurement; through silicon vias; Optical interferometry; Optical variables measurement; Rough surfaces; Scanning electron microscopy; Silicon; Thickness measurement; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location
Austin, TX
ISSN
pending
Print_ISBN
978-1-4673-0146-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/ICICDT.2012.6232854
Filename
6232854
Link To Document