680 nm band high-power individually addressable two-beam lasers with low thermal interference

Author

Takamori, A. ; Mannoh, M. ; Ohnaka, K.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

769

Lastpage

772

Abstract

High-power operation (35 mW/spl times/2) at 70/spl deg/C in a 680 nm band individually addressable AlGaInP/GaInP 2-beam laser diode has been demonstrated for the first time. The 2-beam laser diode employs V-grooves for electrode separation and reduction of laser capacitance, and accurate junction-down bonding to silicon carbide (SiC) submount. Therefore, simultaneous high-power operation, high frequency response and high reliability are achieved.<>

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser frequency stability; laser reliability; semiconductor laser arrays; 35 mW; 680 nm; 70 degC; AlGaInP-GaInP; AlGaInP/GaInP; SiC submount; V-grooves; electrode separation; frequency response; high-power operation; junction-down bonding; laser capacitance; laser diode; reliability; thermal interference; two-beam lasers; Diode lasers; Electrodes; Interference; Laser modes; Optical arrays; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383310

Filename

383310