Title :
In depth characterization of hole transport in 14nm FD-SOI pMOS devices
Author :
Shin, M. ; Shi, M. ; Mouis, M. ; Cros, A. ; Josse, E. ; Kim, G.T. ; Ghibaudo, G.
Author_Institution :
IMEP-LAHC, Grenoble INP, Grenoble, France
Abstract :
In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
Keywords :
MIS devices; silicon-on-insulator; FD-SOI pMOS devices; back biasing; coupling condition; hole transport; mobility enhancement; scattering mechanisms; short channel devices degradation; size 14 nm; temperature 77 K to 300 K; Couplings; High K dielectric materials; Logic gates; MOS devices; Phonons; Scattering; Silicon germanium;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028215
