DocumentCode :
2525510
Title :
Magneto-optical effects of free carriers in semiconductors studied by terahertz-time domain spectroscopy (THz-TDS)
Author :
Quema, A. ; Nashima, S. ; Morikawa, O. ; Hangyo, M.
Author_Institution :
Res. Center for Supercond. Photonics, Osaka Univ., Japan
fYear :
2002
fDate :
26-26 Sept. 2002
Firstpage :
325
Lastpage :
326
Abstract :
Free carrier Faraday and Voigt effects are studied using terahertz time domain transmission spectroscopy (THzTDTS). The frequency dependence of Faraday ellipticity and Faraday rotation are deduced from the experimental data and show good agreement to theoretical calculations based on the Drude model. Voigt ellipticity also shows good agreement to theory and is found to be considerably smaller than that of Faraday ellipticity.
Keywords :
Faraday effect; elemental semiconductors; magneto-optical effects; silicon; submillimetre wave measurement; submillimetre wave spectra; time-domain analysis; Drude model; Faraday ellipticity frequency dependence; Faraday rotation frequency dependence; Si; THz-TDS; THzTDTS; Voigt ellipticity; free carrier Faraday effects; free carrier Voigt effects; magneto-optical effects; n-type silicon wafer; semiconductor free carriers; terahertz-time domain spectroscopy; time domain transmission spectroscopy; Laser beams; Laser excitation; Magnetic field measurement; Magnetooptic effects; Polarization; Probes; Radiation detectors; Spectroscopy; Submillimeter wave measurements; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
Type :
conf
DOI :
10.1109/ICIMW.2002.1076216
Filename :
1076216
Link To Document :
بازگشت