Magneto-optical effects of free carriers in semiconductors studied by terahertz-time domain spectroscopy (THz-TDS)

Author

Quema, A. ; Nashima, S. ; Morikawa, O. ; Hangyo, M.

Author_Institution

Res. Center for Supercond. Photonics, Osaka Univ., Japan

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

325

Lastpage

326

Abstract

Free carrier Faraday and Voigt effects are studied using terahertz time domain transmission spectroscopy (THzTDTS). The frequency dependence of Faraday ellipticity and Faraday rotation are deduced from the experimental data and show good agreement to theoretical calculations based on the Drude model. Voigt ellipticity also shows good agreement to theory and is found to be considerably smaller than that of Faraday ellipticity.

Keywords

Faraday effect; elemental semiconductors; magneto-optical effects; silicon; submillimetre wave measurement; submillimetre wave spectra; time-domain analysis; Drude model; Faraday ellipticity frequency dependence; Faraday rotation frequency dependence; Si; THz-TDS; THzTDTS; Voigt ellipticity; free carrier Faraday effects; free carrier Voigt effects; magneto-optical effects; n-type silicon wafer; semiconductor free carriers; terahertz-time domain spectroscopy; time domain transmission spectroscopy; Laser beams; Laser excitation; Magnetic field measurement; Magnetooptic effects; Polarization; Probes; Radiation detectors; Spectroscopy; Submillimeter wave measurements; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076216

Filename

1076216