• DocumentCode
    2525512
  • Title

    “Phase-Change Memories for nano-scale technology and design”

  • Author

    Pellizzer, Fabio ; Bez, Roberto

  • Author_Institution
    Micron, Process R&D, Agrate Brianza, Italy
  • fYear
    2012
  • fDate
    May 30 2012-June 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper we will review the evolution of Phase-Change Memories (PCM) through the last decade, starting from the first electrical results on single cells and ending with the latest news of multi-Gb chips. Entering into the sub-30nm realm, PCM is demonstrating the capability to enter the broad memory market and to become a mainstream technology.
  • Keywords
    design; nanotechnology; phase change memories; PCM; design; nanoscale technology; phase-change memories; Current density; Heating; Metals; Nonvolatile memory; Phase change materials; Phase change memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design & Technology (ICICDT), 2012 IEEE International Conference on
  • Conference_Location
    Austin, TX
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0146-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/ICICDT.2012.6232857
  • Filename
    6232857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2525512