Experimental model of adaptive body biasing for energy efficiency in 28nm UTBB FD-SOI

Author

Cochet, M. ; Pelloux-Prayer, B. ; Saligane, M. ; Clerc, S. ; Roche, P. ; Autran, J.-L. ; Sylvester, D.

Author_Institution

STMicroelectron., Crolles, France

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

2

Abstract

In Ultra-Thin Body and BOX Fully Depleted Silicon-On-Insulator (UTBB FD-SOI) technology, body biasing can be used to achieve better energy efficiency. We propose a simple Time, Energy, Power (TEP) model based on Ring Oscillators (RO) measurements to predict optimal (V_dd;V_bb) point for complex circuits and validate it against direct experimental measurements. The model predicted Adaptive Forward Body Biasing (A-FBB) energy gain is compared to V_dd only methods: supply scaling, Vdd hopping and power gating.

Keywords

energy conservation; silicon-on-insulator; BOX fully depleted silicon-on-insulator; FBB energy gain; RO measurements; UTBB FD-SOI; Vdd hopping; adaptive forward body biasing; complex circuits; energy efficiency; power gating; ring oscillators measurements; size 28 nm; supply scaling; time energy power model; ultra-thin body technology; Adaptation models; Digital signal processing; Integrated circuit modeling; Logic gates; Power measurement; Predictive models; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028221

Filename

7028221