A 24 GHz, 18 dBm fully integrated power amplifier in a 0.13μm SiGe HBT technology

Author

Demirel, Nejdat ; Kerherve, Eric ; Pache, Denis ; Plana, Robert

Author_Institution

COFI Dept., IMS Lab., Talence

fYear

2008

fDate

June 22 2008-April 25 2008

Firstpage

185

Lastpage

188

Abstract

A 24 GHz, +18.0 dBm fully-integrated power amplifier (PA) with 50 Omega input and output matching is designed in 0.13 mum SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8 dB with 15.89 dBm output power at 1 dB compression and a maximum single-ended output power of +18.0 dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3 mm² (including pads and matching networks).

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; heterojunction bipolar transistors; inductors; power amplifiers; semiconductor materials; BiCMOS; MIM capacitors; SiGe; SiGe HBT technology; frequency 24 GHz; inductors; matching networks; power amplifier; size 0.13 mum; voltage 1.8 V; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; MIM capacitors; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics, 2008. PRIME 2008. Ph.D.

Conference_Location

Istanbul

Print_ISBN

978-1-4244-1983-8

Electronic_ISBN

978-1-4244-1984-5

Type

conf

DOI

10.1109/RME.2008.4595756

Filename

4595756