Title :
An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO
Author :
Chen, Ping-Yu ; Tsai, Zou-Min ; Lu, Shey-Shi ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng. & Graduate Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A W-band voltage control oscillator (VCO) using 0.1m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1 MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; circuit tuning; field effect MMIC; gallium arsenide; indium compounds; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.1 m; 1 MHz; 1 mW; 2 GHz; 97 GHz; AlGaAs-InGaAs-GaAs; HBT; HEMT MMIC VCO; PHEMT MMIC technology; W-band GaAs-based PHEMT MMIC CPW VCO; W-band voltage control oscillator; phase noise performance; ultra low phase noise; Coplanar waveguides; Frequency; Gallium arsenide; Indium gallium arsenide; MMICs; PHEMTs; Phase noise; Tuning; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262938
