A novel CoSi/sub 2/ thin film process with improved thickness scalability and thermal stability

Author

Wei-Ming Chen ; Jengping Lin ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

691

Lastpage

694

Abstract

Novel silicidation processes have been developed to improve the thermal stability of thin CoSi/sub 2/ films (250 /spl Aring/ to 1200 /spl Aring/) by the following silicidation schemes: (1) using as-deposited amorphous Si gate, (2) applying light nitridation to the silicon surface before depositing metals, and (3) using a Co/Ti bilayer technique for growing epitaxial CoSi/sub 2/ layer. Individually, each of the three schemes provides improved thermal stability, while a highly stable CoSi/sub 2/ film on both polysilicon and Si substrate can be obtained by combining these three schemes, in which the CoSi/sub 2/Si structure is stable up to 1100/spl deg/C/30 s and the CoSi/sub 2/polysilicon structure is stable up to 1000/spl deg/C/30 s.<>

Keywords

MOSFET; cobalt compounds; metallic epitaxial layers; nitridation; rapid thermal annealing; semiconductor device metallisation; thermal stability; 1000 C; 1100 C; 250 to 1200 A; 30 s; Co-Ti; Co/Ti bilayer technique; CoSi/sub 2/ thin film process; CoSi/sub 2/-Si; CoSi/sub 2/polysilicon structure; MOSFET; SIMS profile; Si; as-deposited amorphous Si gate; epitaxial CoSi/sub 2/ layer; light nitridation; multilayer structure; rapid thermal annealing; sheet resistance; silicidation processes; thermal stability; thickness scalability; Amorphous materials; Rapid thermal processing; Scalability; Semiconductor films; Silicidation; Silicides; Substrates; Thermal degradation; Thermal stability; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383319

Filename

383319