Title :
Electron-hole bilayer deep subthermal electronic switch: Physics, promise and challenges
Author :
Ionescu, A.M. ; Alper, C. ; Padilla, J.L. ; Lattanzio, L. ; Palestri, P.
Author_Institution :
NANOLAB, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
This paper overviews the physics and promised performance of electron hole bilayer TFETs (EHBTFET) as deep subthermal electronic switch for ultra-low voltage operation. We provide a first complete roadmap for optimizing its design for combined high performance and low leakage. Based on advanced quantum mechanical (QM) simulation methods, it is shown that the major issue with the EHBTFET is the wavefunction (WF) penetration into the underlap region. Various solutions with different varying complexity are proposed and it is shown that steep slope (SS≪60mV/dec) over a few decades of drain current can be attained using these solutions..
Keywords :
field effect transistor switches; tunnel transistors; EHBTFET; QM simulation; WF penetration; deep subthermal electronic switch; drain current; electron hole bilayer TFET; quantum mechanical simulation method; roadmapping; ultralow voltage operation; underlap region; wavefunction penetration; Charge carrier processes; Leakage currents; Logic gates; Photonic band gap; Silicon; Tunneling; EHBTFET; low leakage; quantum mechanical simulation; subthermal electronic switch;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028227
