Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices

Author

Cristoloveanu, S. ; Wan, J. ; Ferrari, P. ; Bawedin, M. ; Navarro, C. ; Zaslavsky, A. ; Le Royer, C. ; Villalon, A. ; Fenouillet-Beranger, C. ; Solaro, Y. ; Fonteneau, P.

Author_Institution

LAHC, Univ. of Grenoble-Alpes, Grenoble, France

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

2

Abstract

Tunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs. However, other mechanisms that take place in SOI devices can provide even more abrupt switching and higher current. We examine the family of emerging TFET-competing devices based on barrier modulation, bipolar amplification and impact ionization. Practical results for devices fabricated in 14-28 nm FDSOI technology will be discussed.

Keywords

CMOS integrated circuits; field effect transistors; silicon-on-insulator; tunnel transistors; CMOS-compatible sharp-switching devices; FDSOI technology; barrier modulation; beyond TFET; size 14 nm to 28 nm; tunneling-based transistors; Impact ionization; Logic gates; MOSFET; Switches; Switching circuits; Tunneling; BET-FET; CMOS; FDSOI; TFET; Z²-FET; sharp switching; tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028228

Filename

7028228