• DocumentCode
    2525768
  • Title

    High performance etchant for thinning p+-InP and its application to p+n InP solar cell fabrication

  • Author

    Faur, M. ; Faur, M. ; Bailey, Susan ; Brinkler, D. ; Goradia, M. ; Weinberg, I. ; Fatemi, Navid

  • Author_Institution
    Dept. of Electr. Eng., Cleveland State Univ., OH, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    241
  • Abstract
    An etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) has been developed for thinning, after contacting, the p+ emitter layer of p+n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min have been obtained. After thinning the 0.6 to 2.5 μm thick p+ InP layer down to 60-250 nm, specular surfaces have been obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the residual P-rich oxide after thinning the emitter layer provides surface passivation of p + InP surfaces and can also serve as a first-layer AR coating
  • Keywords
    III-V semiconductors; etching; indium compounds; solar cells; H2O2; H3PO4; HNO3; InP solar cell; etchant; p+n solar cell fabrication; semiconductor; specular surfaces; thermal diffusion; Chemicals; Coatings; Etching; Fabrication; Hafnium; Indium phosphide; Oxidation; Photovoltaic cells; Photovoltaic systems; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169216
  • Filename
    169216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2525768