DocumentCode
2525796
Title
A new approach to implement 0.1 /spl mu/m MOSFET on thin-film SOI substrate with self-aligned source-body contact
Author
Chen, V.M.C. ; Woo, J.C.S.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
657
Lastpage
660
Abstract
An alternative approach was used to optimize SOI MOSFET for subquarter micron channel length. It involves a direct transfer of the optimized bulk Si structure to SOI substrate with film thickness of /spl ges/100 nm. Since the device is operating in non-fully depleted mode, floating body effect has to be eliminated. This is accomplished through a novel self-aligned asymmetric source-body contact in which the current conducts through tunneling. Test structures have been fabricated and good electrical results were obtained.<>
Keywords
MOSFET; silicon-on-insulator; substrates; thin film devices; tunnelling; 0.1 micron; MOSFET; depleted mode; floating body effect; self-aligned asymmetric source-body contact; self-aligned source-body contact; subquarter micron channel length; thin-film SOI substrate; tunneling; Boron; Doping; FETs; Fabrication; Implants; MOSFET circuits; Substrates; Testing; Transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383324
Filename
383324
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