O(n) layout-coloring for multiple-patterning lithography and conflict-removal using compaction

The use of multiple patterning optical lithography for sub-20nm technologies has become inevitable with delays in adopting the next generation of lithography systems. The biggest technical challenge of multiple patterning is failure to reach a manufacturable layout-coloring solution, especially in dense layouts. This paper offers a post-layout solution for the removal of conflicts, i.e., patterns that cannot be colored without violations. The proposed method consists of three steps essentially: layout coloring, exposure layers and geometric rules definition, and, finally, layout legalization using compaction and multiple-patterning rules as constraints. The method is general and can be used for different multiple-patterning technologies including LELE double-patterning (DP), tripe/multiple-patterning (i.e., multiple litho-etch steps), and self-aligned double patterning (SADP). For demonstration purposes, we apply the proposed method in this paper to remove conflicts in DP. We offer an O(n) layout-coloring algorithm for DP, which is up to 200X faster than the ILP-based approach, and extend it for multiple-patterning (MP). The conflict-removal problem is formulated as a linear program (LP), which permits an extremely fast run-time (less than 1 minute in real time for macro layout). The method was tested on cells from a commercial 22nm library designed without any multiple-patterning awareness; for many cells, the method removes all conflicts without any area increase; for some complex cells, the method still removes all conflicts but with a modest 6.7% average increase in area.