Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

The intrinsic DC device performance tradeoff between current drive and short-channel effect is explored experimentally in a wide range of bulk and SOI devices. For the range of devices studied, the intrinsic performance tradeoff is improved primarily by the junction technology (e.g. use of "halo" structure) in bulk devices and the silicon film thickness or mode of operation (fully or partially-depleted) in SOI. Comparing bulk and SOI devices, fully-depleted devices behave similarly to bulk devices, while partially-depleted devices are more complicated due to the floating-body effects.<>