Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

Author

Su, L.T. ; Hang Hu ; Jacobs, J.B. ; Sherony, M.J. ; Wei, A. ; Antoniadis, D.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

649

Lastpage

652

Abstract

The intrinsic DC device performance tradeoff between current drive and short-channel effect is explored experimentally in a wide range of bulk and SOI devices. For the range of devices studied, the intrinsic performance tradeoff is improved primarily by the junction technology (e.g. use of "halo" structure) in bulk devices and the silicon film thickness or mode of operation (fully or partially-depleted) in SOI. Comparing bulk and SOI devices, fully-depleted devices behave similarly to bulk devices, while partially-depleted devices are more complicated due to the floating-body effects.<>

Keywords

MOSFET; silicon-on-insulator; SOI MOSFETs; current drive; deep-submicrometer bulk; floating-body effects; fully-depleted devices; intrinsic DC device performance; junction technology; short-channel effect; silicon film thickness; Doping profiles; Drives; Instruments; Jacobian matrices; MOSFETs; Optical films; Optical wavelength conversion; Semiconductor films; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383326

Filename

383326