DocumentCode :
252583
Title :
SOI substrate solutions for recent advanced device applications
Author :
Noto, N. ; Ishikawa, O. ; Aga, H. ; Ishizuka, T. ; Yokokawa, I. ; Nakano, M.
Author_Institution :
Technol. & Dev. Div., Shin-Etsu Handotai Co. Ltd., Tokyo, Japan
fYear :
2014
fDate :
6-9 Oct. 2014
Firstpage :
1
Lastpage :
2
Abstract :
SOI substrate technology for recent advanced device applications is reviewed from a standpoint of a dedicated wafer supplier. A structure of Si thin film on sapphire (SOS) has been used for device development and manufacturing from 1970´s. Currently a SOI substrate of Si/SiO2/Si structure is widely used for industrial applications.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optics; micromechanical devices; semiconductor thin films; silicon; silicon-on-insulator; Al2O3; MEMS; RF devices; SOI CMOS technology; SOI substrate technology; Si-SiO2-Si; sapphire; silicon photonics; silicon thin film; CMOS integrated circuits; Conductivity; Performance evaluation; Radio frequency; Silicon; Silicon-on-insulator; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
Type :
conf
DOI :
10.1109/S3S.2014.7028232
Filename :
7028232
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=252583
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