BIMOS transistor and its applications in ESD protection in advanced CMOS technology

Author

Galy, Ph ; Jimenez, J. ; Bourgeat, J. ; Dray, A. ; Troussier, G. ; Heitz, B. ; Guitard, N. ; Marin-cudraz, D. ; Beckrich-Ros, H.

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

May 30 2012-June 1 2012

Firstpage

1

Lastpage

4

Abstract

BIMOS transistor is a useful device and now compliant in advanced CMOS technology. This device acts with high controlled current gain. Thus, it is an efficient candidate for Electrostatic Discharge (ESD) protection. Moreover it is well known that ESD protection for advanced CMOS technologies is a major challenge due to down-scaling which introduces a reduction of the intrinsic robustness. This paper introduces the BIMOS ESD approach with simulations in 45nm. Silicon measurements are performed on 32 nm CMOS high k metal gate.

Keywords

CMOS integrated circuits; MOSFET; bipolar transistors; electrostatic discharge; BIMOS transistor; CMOS high k metal gate; ESD protection; advanced CMOS technology; electrostatic discharge protection; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Logic gates; Resistors; Transistors; BIMOS transistor; CMOS; ESD protection;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2012 IEEE International Conference on

Conference_Location

Austin, TX

ISSN

pending

Print_ISBN

978-1-4673-0146-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/ICICDT.2012.6232878

Filename

6232878