Title :
Impact of ultra-low voltages on single-event transients and pulse quenching
Author :
Ahlbin, J.R. ; Gadfort, P.
Author_Institution :
Inf. Sci. Inst., Univ. of Southern California, Arlington, VA, USA
Abstract :
Single-event transients (SET) and pulse quenching are analyzed at sub-Vt and super-Vt voltage levels. Two different inverter designs are simulated for their single-event response. These simulations show that SET pulse widths become longer with decreasing voltage for the inverter designed to work at sub-Vt voltage levels. Additionally, pulse quenching becomes significant between 0.5 V and 0.7 V for the standard 2-T inverter.
Keywords :
invertors; radiation hardening (electronics); SET pulse widths; inverter designs; pulse quenching; single-event response; single-event transients; standard 2-T inverter; sub-Vt voltage levels; super-Vt voltage levels; ultra-low voltages; Integrated circuit modeling; Inverters; MOSFET; Solid modeling; Standards; Transient analysis; charge sharing; low-power; single events; single-event transient; single-event upset; soft errors; sub-threshold;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028237
