Title :
Compensation of total ionizing dose effects in ULV SoCs through adaptive voltage scaling
Author :
De Vos, J. ; Kilchytska, V. ; Flandre, D. ; Bol, D.
Author_Institution :
ICTEAM Inst., Univ. catholique de Louvain (UCL), Louvain-la-Neuve, Belgium
Abstract :
Total ionizing dose (TID) jeopardizes the operation of ULV circuits by shifting the threshold voltage of the devices. Measurements on a 65nm SoC show that it modifies the output of an on-chip 4-T voltage reference by 3.5% and the gate delay at ULV by 17%. This harms the timing closure of ULV digital systems based a conventional power management architecture generating constant clock frequency and supply voltage. We show by experimental measurements that the use of an on-chip adaptive voltage scaling system efficiently cancels these effects of TID for robust timing closure at ULV.
Keywords :
reference circuits; system-on-chip; SoC; TID; ULV digital systems; constant clock frequency; on-chip 4-T voltage reference; on-chip adaptive voltage scaling system; power management architecture; robust timing closure; size 65 nm; supply voltage; system-on-chip; threshold voltage; total ionizing dose effects; ultra-low voltage operation; Central Processing Unit; Delays; Logic gates; System-on-chip; Voltage control; Voltage measurement;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028238