Title :
Measurement of bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation
Author :
Kousik, G.S. ; Ling, Z.G. ; Ajmera, P.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
Abstract :
The work of K.L. Luke and L.-J. Cheng (1987) is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. The authors present the analysis and discuss experimental procedures to extract the parameters. The contactless measurement technique is based on the transient behavior of infrared absorption due to the decay of optically excited excess carriers. In order to determine the surface recombination velocities at both surfaces, the experiment must be done for the two sides acting as front surfaces. An example of parameter extraction is presented
Keywords :
carrier lifetime; electron-hole recombination; excitons; impurity and defect absorption spectra of inorganic solids; infrared spectra of inorganic solids; surface electron states; bulk lifetime; contactless measurement technique; infrared absorption; optically excited excess carriers; parameter extraction; pulsed optical excitation; semiconductor; surface recombination velocities; wafer surfaces; Boundary conditions; Convolution; Equations; Pulse shaping methods; Space vector pulse width modulation; Velocity measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169217
