Thermomechanical and electromigration studies with a high sensitive and high resolution laser probe

Author

Dilhaire, S. ; Phan, T. ; Schaub, E. ; Claeys, W.

Author_Institution

Centre de Phys. Moleculaire Optique et Hertzienne, Bordeaux I Univ., Talence, France

fYear

1997

fDate

21-25 Jul 1997

Firstpage

62

Lastpage

67

Abstract

A high sensitive and high resolution laser probe devoted to the thermomechanical and electromigration studies of microelectronic interconnects has been developed. It provides information, at micrometric scale, on temperature increase and thermal stress which are directly related to electromigration failures of interconnects. The high sensitivity (5 mK and 0.1 picometer deformation) allows in situ characterisation and early detection of defaults

Keywords

electromigration; failure analysis; integrated circuit interconnections; light interferometry; measurement by laser beam; thermal stresses; default detection; differential interferometer; electromigration failure; laser probe; microelectronic interconnect; thermal stress; thermomechanics; Electromigration; Integrated circuit interconnections; Laser beams; Laser theory; Optical interferometry; Optical polarization; Optical surface waves; Probes; Thermal stresses; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638122

Filename

638122