Title :
Design of a single-chip white light-emitting InGaN/GaN diode
Author :
Xiansong, Fu ; Wencui, Xu ; Pingjuan, Niu ; Haitao, Tian ; Chenming, Dong ; Hong, Chen
Author_Institution :
Sch. of Inf. & Commun. Eng., Tianjin Polytech. Univ., Tianjin, China
Abstract :
LED is the impressive light source in the 21st century, and the naissance of white LED is a major milestone in the lighting history of mankind, and stand for a brand-new light source. LED can not only improve the quality and efficiency of light, but also save energy and reduce environmental pollution. Developing LED industry has great significance for the national economy and the people´s livelihood. In this paper, the mechanism of LED lighting is introduced. And then, main methods for fabricating white LED and recent progresses in white LED are studied. Finally, a novel single-chip white light-emitting InGaN/GaN diode is design. The single-chip white LED emits white light as the driving current is from 5mA to 60mA. The output power of the white LED is 24.4mcd at the driving current of 60mA.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light sources; lighting; wide band gap semiconductors; InGaN-GaN; current 5 mA to 60 mA; light source; lighting; single-chip white LED; single-chip white light-emitting diode; white LED design; Color; Gallium nitride; Light emitting diodes; Phosphors; Photonics; Quantum well devices; metal-organic vapor phase epitaxy(MOCVD); quantum dots; quantum wells; single-chip white LED;
Conference_Titel :
Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8100-2
Electronic_ISBN :
978-1-4244-8102-6
DOI :
10.1109/ICMET.2010.5598465