DocumentCode :
252602
Title :
Monolithic IC integration key alignment aspects for high process yield
Author :
Uhrmann, T. ; Wagenleitner, T. ; Glinsner, T. ; Wimplinger, M. ; Lindner, P.
Author_Institution :
EV Group, St. Florian am Inn, Austria
fYear :
2014
fDate :
6-9 Oct. 2014
Firstpage :
1
Lastpage :
2
Abstract :
Lithographic scaling has been the main growth driver to follow Moore´s law of cost reduction and performance increase for several decades. However, the 22nm node appears to be a game changer, where other core processes besides lithography have to be taken into account. Monolithic integration is one solution, where lithographic scaling is replaced by integration in vertical direction. Stacking and electrically contacting several semiconductor layers is challenging, as multiple unit processes have to be solved and put together. One of the key processes for monolithic integration is aligned wafer-to-wafer bonding. Besides optimization of the alignment accuracy, particle cleaning or plasma activation, earlier processing steps have important influence to a high yield processing of monolithic integrated circuits.
Keywords :
lithography; monolithic integrated circuits; wafer bonding; Moore law; alignment accuracy; core processes; cost reduction; game changer; high process yield; lithographic scaling; monolithic IC integration; monolithic integrated circuits; multiple unit processes; particle cleaning; plasma activation; semiconductor layers; size 22 nm; vertical direction; wafer-to-wafer bonding; Accuracy; Bonding; Monolithic integrated circuits; Optimization; Strain; Through-silicon vias; Wafer bonding; alignment accuracy; fusion bonding; hybrid bonding; monolithic integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
Type :
conf
DOI :
10.1109/S3S.2014.7028241
Filename :
7028241
Link To Document :
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