Title :
New precision alignment methodology for CMOS wafer bonding
Author :
Sugaya, I. ; Mitsuishi, H. ; Maeda, H. ; Okada, M. ; Okamoto, K.
Author_Institution :
Nikon Corp., Yokohama, Japan
Abstract :
A new precision alignment methodology suitable for distorted CMOS wafer bonding is proposed. Using multiaxis-interferometer and load-cell measurements with in situ fine stage-position adjustment combined with newly designed wafer holders, two wafers are flattened and aligned precisely. The alignment capability is 250 nm or better without any damage to low-k materials, making the methodology suitable for future 3D integration.
Keywords :
CMOS integrated circuits; low-k dielectric thin films; wafer bonding; 3D integration; distorted CMOS wafer bonding; in situ fine stage-position adjustment; load-cell measurements; low-k materials; multiaxis-interferometer; precision alignment methodology; wafer holders; Accuracy; Bonding; CMOS integrated circuits; Clamps; Temperature measurement; Three-dimensional displays; Wafer bonding;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028242
